Barrier height modification in Au/Ti/n-GaAs devices with a HfO$_2$ interfacial layer formed by atomic layer deposition
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 材料工程
[关键词] Barrier height modification and inhomogeneous;bias-dependent barrier height;metalâinsulating layerâ semiconductor (MIS) device;atomic layer deposition (ALD);temperature-dependent MIS diode parameters. [时效性]
