Low-level NO gas sensing properties of Zn$_{1−x}$Sn$_x$O nanostructure sensors under UV light irradiation at room temperature

[摘要] Zn$_{1−x}$Sn$_x$O ($x = 0$, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn$_{0.90}$Sn$_{0.10}$O sensor has exhibited the highest response for 20 ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn$_{0.90}$Sn$_{0.10}$O sensor. Zn$_{0.90}$Sn$_{0.10}$O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas.

[学科分类] 材料工程

[关键词] Gas sensor;UV light irradiation;Sn-doped ZnO nanostructures.