Fabrication and characterization of novel nanostructures based on block copolymer lithography

[摘要] (cont.) As the inter-hole spacing is decreased, both experiment and simulation results show that the coercivity and switching field distribution is reduced, unlike the behavior seen in films with micron- sized holes. In the multilayer, unlike the continuous film, the NiFe reverses at positive fields due to the strong magnetostatic interactions between the Co and NiFe layers present near the holes. Finally, arrays of high-aspect-ratio single crystal silicon nanowires (SiNWs) have also been fabricate by combining block copolymer lithography and metal assisted etching. These SiNWs may be useful in the application of field-effect biosensors and lithium batteries.

[发布机构] Massachusetts Institute of Technology