High quality metamorphic graded buffers with lattice-constants intermediate to GaAs an InP for device applications

[摘要] (cont.) We term this combination of many thin layers of constituent materials a Digital Metamorphic Alloy (DMA). The DMAs are used to replace conventional random-alloys in a metamorphic buffer layer. Such a DMA buffer has superior thermal conductivities to, and avoids materials growth-related problems associated with, conventional compositionally-graded random-alloy metamorphic buffers. The method of fabricating DMAs is described. Lattice-constant grading from GaAs to InP has been carried out using both the DMA concept, and a hybrid random-alloy-buffer/DMA approach.

[发布机构] Massachusetts Institute of Technology