p-n junction photodetectors based on macroscopic single-wall carbon nanotube films

[摘要] Single-walled carbon nanotubes (SWCNTs) are promising for use in solar cells and photodetectors because of their strong optical absorption in most of the solar spectrum. There have been many reports about the photovoltaic effect in nanoelectronic devices based on individual SWCNTs, but they have been limited by complicated fabrication and miniscule absorption. There has been a growing trend for merging SWCNTs into micro-and macroscopic devices to provide more practical applications. Here we report the photoresponse of macroscopic SWCNT films with a p-n junction at room temperature. Photovoltage (PV) and photocurrent (PC) due to the photothermoelectric (PTE) effect were observed at the junction, and they were larger by one order of magnitude as compared with their values at the metal-SWCNT interfaces. Various factors affecting PV amplitude and response time have been studied, including junction length, substrate, and doping level. The maximal responsivity we observed was 1V/W with samples on Teflon tape, while a fast response time 80 S was observed with samples on AlN substrates. Hence an optimal combination of photoresponse time and amplitude can be found by proper choice of substrate.It was found that PV increased nonlinearly with increase in n-doping concentration, indicating the existence of an optimal doping level. This result also suggests the possibility to further improve photoresponse by changing p-doping level. Finally, we checked the photoresponse in wide wavelength range (360-900 nm), and PV was observed throughout, indicating that the device could potentially be used as a broadband photodetector.

[发布机构] Rice University

[效力级别] Single-walled