Polarization reversal in thin film lithium niobate on silicon

[摘要] The spontaneous polarization of thin film LiNbO$sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage pulse, and polarization reversal is detected either as a photocurrent reversal, or as a current transient whose integrated area is proportional to the spontaneous polarization. For 80 mil$sp2$ size areas of thickness.3 $mu$m, the fastest switching speed was 500 ns. The samples consisted of a silicon substrate, a thin film of LiNbO$sb3$ and a metal contact to form an MFS (metalferroelectric-semiconductor) structure. The LiNbO$sb3$ film was formed by rf sputtering LiNbO$sb3$ onto heated $langle111angle$ silicon substrates.

[发布机构] Rice University

[效力级别] Electrical