Equilibrium and diffusion studies of metal-hydrogen systems

[摘要] Several new methods and models have been developed pertaining to equilibrium properties of hydrogen in random binary substitutional alloys at room and lower temperatures, describing both statistics and kinetics of hydrogen in them. They represent a solution to the problem of the complete Fermi-Dirac description which is physically appropriate for these systems. Hydrogen diffusion which proceeds via lattice assisted quantum tunneling at room and lower temperatures requires a new and different description from the one based on the thermal hopping picture, which pertains only to relatively high temperatures. It is also shown that the analogs of the solution to the Fermi-Dirac problem of hydrogen can be successfully applied to the description of vacancies in a hydrogenated system, a phenomena known to occur due to high hydrogen-vacancy binding energies and the creation of hydrogen-vacancy clusters. The solution based on this model applies to much lower temperatures and higher concentrations than the tradition alone. This methodology has also been applied to the surface problem where very large vacancy and hydrogen concentrations occur. This is of special importance since mechanical properties are known to be greatly affected by the surface. As another consequence of hydrogen induced vacancies, hydrogen induced lattice migration (HILM) occurs. This has been demonstrated in our electrical resistivity study of palladium wires where recrystallization and annealing effects were observed upon hydrogen-heat-treatment (HHT).

[发布机构] Rice University

[效力级别] matter