A novel SEU hardened SRAM bit-cell design

[摘要] An improved single event upset (SEU) tolerant static random access memory (SRAM) bit-cell with differential read and write capability is proposed. SPICE simulation suggests a more than 1000 times improvement of the critical charge over the standard 6T SRAM cell. With the SEU robustness greatly enhanced at low area and electrical performance costs, the proposed cell is well suited to harsh radiation environment applications such as aerospace and high energy physics.

[学科分类] 电子、光学、磁材料

[关键词] SRAM;single event upset;radiation hardening by design