A wideband high efficiency V-band 65 nm CMOS power amplifier with neutralization and harmonic controlling

[摘要] A wideband high-efficiency V-band CMOS power amplifier (PA) is proposed in this paper. Neutralization technique is used to reduce the Miller effect and improve the power gain. A wideband on-chip transformer is used to adjust the transistors’ voltage waveform to improve the PAE performance. The PA works from 51 GHz to 64 GHz with 13 GHz absolute bandwidth and 22.6% relative bandwidth. The output power reaches 14.9 dBm with 16.3% peak PAE. The circuit is designed in a 65 nm CMOS technology.

[学科分类] 电子、光学、磁材料

[关键词] power amplifier;transformer;CMOS