Design of a low-insertion-phase-shift MMIC attenuator integrated with a serial-to-parallel converter

[摘要] This work presents a monolithic DC∼4 GHz 6-bit digital attenuator with low insertion phase shift and attenuation error. Based on GaAs E/D pHEMT process, a serial-to-parallel converter is introduced to decrease the control pads of the chip. In the 16 dB attenuation bit, a switched-path-type topology is employed in order to extend the bandwidth and achieve low insertion phase shift. The attenuator has 0.5 dB resolution and 0∼31.5 dB attenuation range. Measurement shows less-than-2.3 dB insertion loss at reference state, and larger-than-14 dB return loss at all states. An rms attenuation error of less-than-0.3 dB and phase-shift-variations less than 2 deg are achieved. The size of the chip is 2.0 mm × 1.7 mm.

[学科分类] 电子、光学、磁材料

[关键词] GaAs E/D pHEMT;serial-to-parallel converter;MMIC;attenuator