140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

[摘要] This paper presents a high gain, medium power amplifier for D band application based on 0.5 µm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75 GHz and at 140 GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140 GHz with DC power consumption 250 mW.

[学科分类] 电子、光学、磁材料

[关键词] InP DHBT;composite collector;power amplifier;millimeter-wave