Understanding the influence of RESET current due to the active region of phase change memory

[摘要] The RESET current of T-shaped phase change memory (PCM) cells based on Ge2Sb2Te5 (GST) with 35 nm heating electrodes has been studied to understand the influences of RESET current due to the active region via Transmission Electron Microscope (TEM) and testing. The results have been presented and analyzed. Based on the TEM images, it is found that the grains inside and outside the active region have different structures for the operated cells. And the RESET current can be effectively reduced by obtaining larger active region with the grains of Face Centered Cubic (FCC), confirmed by the testing results.

[学科分类] 电子、光学、磁材料

[关键词] phase change memory (PCM);RESET;active region