Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

[摘要] An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with the degradation due to total dose irradiation taken into consideration. Based on this model, the numerical simulation has been carried out by Matlab, and the influence of the total dose on channel current was simulated. Furthermore, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the proposed model provides good reference for research on irradiation reliability of uniaxial strained Si nanometer NMOSFET.

[学科分类] 电子、光学、磁材料

[关键词] uniaxial strained Si;nano NMOSFET;total dose;channel current