Structural and optical properties of diluted magnetic Ga$_{1−x}$Mn$_x$As–AlAs quantum wells grown on high-index GaAs planes

[摘要] We report on the structural and optical properties of Ga$_{1−x}$Mn$_x$As–AlAs quantum wells (QWs) with $x = 0.1$% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and(411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used toinvestigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributedon the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregationwas observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mnsegregation. XRD measurements were used to determine 2$\theta$, $d$ and cell parameters.

[学科分类] 材料工程

[关键词] AFM;MBE;photoluminescence;XRD;quantum well;GaMnAs.