Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization

[摘要] This paper briefly describes our work and the results on the growth of several III–V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.

[学科分类] 材料工程

[关键词] Growth;epitaxy;characterization;III–V compounds.