Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

[摘要] ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

[学科分类] 材料工程

[关键词] Zirconium dioxide;high-k;PECVD;EOT.