SSTA design methodology for low voltage operation

[摘要] Statistical process variations have long been an important design issue. But until recently, process variations have been global process variations, i.e., transistor parameters may vary from die to die but are constant within a die. With transistor geometries shrinking below 65nm, however, a new kind of statistical variation, known as Local or Intra-die variation, has become important for logic and memory. Local variations are primarily the result of variations in the number of dopant atoms in the channel of CMOS transistors. To achieve ultra-low power, ICs are being designed for VDD

[发布机构] Massachusetts Institute of Technology