Temperature dependence of thermoelectric figure of merit and maximum thermal efficiency of a thermoelectric generator

[摘要] The expression for the dimensionless figure of merit of a semiconductor of given carrier mobility and lattice thermal conductivity expressed in terms of reduced temperature has been numerically evaluated for various scattering indices. The results are presented graphically enabling the temperature dependence of the figure of merit to be found. Theoretical upper limit of maximum thermal efficiency of a given material with fixed cold and hot junction temperatures is considered and presented graphically. The general rules for material selection are discussed.

[发布机构] Rice University