FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH PURITY EPITAXIAL INDIUM-PHOSPHIDE

[摘要] Far-infrared photoconductivity from shallow donors in n-type InP was studied using Fourier transform spectroscopy. The 1s to 2p transition frequency was found to be 45.5 (+OR-) 0.2 cm(;;-1) in zero magnetic field. Spectral response measurements made in magnetic fields from 0 to 40 KG reveal Zeeman transitions of the 1s to 2p (m = 0, (+OR-) 1) states. Laser magnetospectroscopy was also investigated, employing an optically pumped far-infrared laser. There is excellent agreement between the results obtained by the two experiments. From the transition energies, an effect mass of 0.077 (+OR-) 0.003 m(,o) is obtained. With the experimentally determined 1s to 2p transition energy and the effect mass, the static dielectric constant of InP at 4.2K was found to be 11.8 (+OR-) 0.2.

[发布机构] Rice University

[效力级别] Electrical engineering