Effects of the decay of sulfur-35 on some electrical properties of cadmium sulfide semiconducting films

[摘要] The vacuum behavior of radioactive and non-radioactive semiconducting films of CdS has been studied as a function of time in order to determine the effect of radioactive doping. Radioactive films containing S35 were made by reacting radioactive H2S with thin films of Cd metal. S35 decays with the emission of a weak beta to Cl35. The specific activity of the sulfur used in the experiments was sufficient to produce 1018 chlorine impurities/cm 3 in the CdS lattice during the first month of decay.

[发布机构] Rice University