Inelastic ion scattering from semiconductor surfaces

[摘要] Recent experimental investigations into charge transfer during ion/semiconductor surface collisions indicate dependence of the scattered ion;;s neutralization probability upon the target surface;;s local electronic environment along the scattered ion trajectory. This work presents qualitative modeling of these experiments demonstrating how the target surface;;s local electrostatic potential and charge density modify the scattered ion;;s neutralization rates. These models have been applied to Ne+ scattering and S- recoil from CdS {0001} and {0001¯} surfaces as well as Ne + scattering from intrinsic, n- and p-doped Si(100)-(2x1) surfaces. Correlation between electrostatic surface potential and ion neutralization probability has been shown for ion scattering from the CdS surfaces. Ne + neutralization during scattering from the Si(100)-(2x1) surface correlates to local surface charge density along the ion trajectory. Variations in ion neutralization rate for the intrinsic, n- and p-doped surfaces have been correlated to band bending at the Si surface.

[发布机构] Rice University