Laser-assisted metalorganic chemical vapor deposition of zinc sulfide

[摘要] Laser-assisted metalorganic chemical vapor deposition (MOCVD) was used to grow crystalline zinc sulfide at temperatures as low as 200$spcirc$C. The metalorganic sources, dimethylzinc and diethylsulfide, were photodissociated with radiation from a 193 nm ArF excimer laser passing parallel to the substrate. Epitaxial films were grown on gallium arsenide by both the thermal and laser-assisted MOCVD methods. Zinc sulfide films grown on silicon substrates were polycrystalline possibly due to a reaction between sulfur and the silicon substrate creating an amorphous compound at the interface. X-ray diffraction and photoluminescence results indicate that films grown by laser-assisted MOCVD below 500$spcirc$C on either substrate were not as high quality as those grown above 500$spcirc$C. It is postulated that increased hydrocarbon contamination in the low temperature laser-assisted MOCVD grown films is responsible for the decrease in film quality.

[发布机构] Rice University

[效力级别] Electrical engineering