Temperature-Dependent Carrier Lifetime in GaNAs Using Resonant-Coupled Photoconductive Decay: Preprint.

[摘要] Presented at the 2001 NCPV Program Review Meeting: Temp-dependent lifetime measurements can further characterize trapping and recombination. We did lifetime measurements on GaNAs/GaAs using photoconductive decay technique.

[发布机构] Technical Information Center Oak Ridge Tennessee

[学科分类] 工程和技术（综合）

[关键词] Meetings;Photovoltaic cells;Carrier lifetime;Gallium nitrides;Gallium arsenides