Radiation defect dynamics in 3C-, 4H-, and 6H-SiC studied by pulsed ion beams

[摘要] Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 degrees C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.

[发布日期] 2018-11-15

[效力级别]  Proceedings Paper