A 25-Gb/s high-sensitivity transimpedance amplifier with bandwidth enhancement

[摘要] A 25-Gb/s transimpedance amplifier (TIA) is proposed and realised in a 0.18-µm SiGe BiCMOS process. A series-peaking network and a shunt-peaking network are used to increase the bandwidth of the modified TIA. A gain boosting circuit is used to optimize the input-referred noise. The chip occupies an area of 0.8mm 2 , and consumes 82mW from a 3.3-V supply. The TIA transimpedance gain is ∼ 4.5K ohms. Bite error rate tests indicate that the sensitivity of the fabricated TIA is -13dBm for a date rate of 25.78125-Gb/s (Bit error rate (BER)=10 -12 , λ =1310nm, ER =4.2dB, and 0.8A/W PD responsivity).

[学科分类] 电子、光学、磁材料

[关键词] transimpedance amplifier ,sensitivity ,optical-electrical eye diagram ,bandwidth enhancement