Impact of non-uniformly doped double-gate junctionless transistor on the performance of 6T-SRAM bitcell
[摘要] This work substantiates the impact of Gaussian doping on the electrical performance of double gate junctionless field-effect transistor (DG-JLFET). To get a better understanding of the influence of non-uniform doping, the device is compared with uniform-doped DG-JLFET with various concentrations. The device is later used to demonstrate its usability in six-transistor static random access memory (6T SRAM) bitcell by studying the performance metrics, i.e. stability noise margin and write delay. A comparison of performance metrics is also given with uniformly doped DG-JLFET-based-6T SRAM. Improvement in static noise margin was observed with Gaussian doping without compromising with write access time.
[发布日期] [发布机构]
[效力级别] [学科分类] 计算机科学（综合）
[关键词] SRAM chips;semiconductor doping;field effect transistor circuits;electrical performance;double gate junctionless field-effect transistor;uniform-doped DG-JLFET;six-transistor static random access memory bitcell;performance metrics;uniformly doped DG-JLFET-based-6T SRAM;static noise margin;Gaussian doping;6T-SRAM bitcell;nonuniformly doped double-gate junctionless transistor;stability noise margin;write delay;write access time [时效性]
