Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

[摘要] We study the dissipationless transport properties of chiral edge state (CES) in the Chern insulator MnBi2Te4 devices. A near-zero longitudinal resistance and a quantized Hall plateau similar to 0.97h/e(2) up to 22 K are observed. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping (6 similar to 22 K) and thermal activation (>22 K). This indicates nondissipation as well as the chirality of the edge state, in conjunction with the nonlocal measurements. At 2 K, a current of over 1.4 mu A could break the dissipationless transport. Besides, it is found that a p-n junction has almost no influence upon the CES of Chern insulator MnBi2Te4. These present a comprehensive picture of the CES transport in this newly emerging material.

[关键词] HALL;CONDUCTIVITY;BREAKDOWN