Excitonic lasing in semiconductor quantum wires

[摘要] Direct experimental evidence for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogeneously broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8x10(5) cm(-1).

[关键词] BAND-GAP RENORMALIZATION;POLARIZATION ANISOTROPY;TEMPERATURE-DEPENDENCE;RADIATIVE LIFETIMES;OPTICAL-ABSORPTION;WELL WIRES;SPECTRA;CONFINEMENT;EMISSION;LASER