Temperature Dependence of GaN HEMT Small Signal Parameters

[摘要] This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance (gm), output impedance (CdsandRds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured. The variations with temperature are established forgm,Cds,Rds,Cdg,Cgs, andRgin the GaN technology. This information is useful for MMIC designs.

[学科分类] 电子、光学、磁材料