ENHANCED PHOTOVOLTAIC PROPERTIES OF InAs/GaAsQUANTUM-DOT INTERMEDIATE-BAND SOLAR CELLSBY USING CYLINDRICAL QUANTUM DOTS

[摘要] Results of recent studies on the light absorption and efficiency of single-junction solarcells show that the efficiency of these cells has approached its value in the Shockley–Queisser limit (33.5%). We suggest a solution to increase efficiency by proposing a newstructure of single-junction solar cells. Considering the effects of electron-hole generationrate and surface recombination on efficiency, studies have been conducted to increaseefficiency. In this paper, by using an intermediate-band consisting of cylindrical quantumdots, thin-film layers such as GaAs, an anti-reflection coating,andAl0.2Ga0.8Asas a backsurface field, considerable improvement is achieved in the generation rate, current density,open-circuit voltage, and, eventually, efficiency of the cell. Results indicate that efficiencyis not equal at all frequencies and bands and it is based on the material and structure.Moreover, absorption is improved by increasing the number of quantum dots. By usingcylindrical quantum dots, the open-circuit voltage and cell efficiency enhancement arerespectively obtained 20% and 17% compared to the reference cell.

[学科分类] 生物技术

[关键词] Gallium arsenide;Absorption;Intermediate-band;Thin-film layer;Cylindrical quantum dots